IAUCN04S7L050HATMA1 vs IAUCN04S7L005ATMA1 Perbandingan
Perbandingan bersamaan detil IAUCN04S7L050HATMA1 dari Infineon dan IAUCN04S7L005ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IAUCN04S7L050HATMA1 - 40V Dual N-Ch OptiMOS 7, 5.04mΩ | Infineon
IAUCN04S7L050HATMA1 ✓ AktifInfineon
IAUCN04S7L005ATMA1 - 40V 430A 0.52mΩ OptiMOS 7 MOSFET | Infineon
IAUCN04S7L005ATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IAUCN04S7L050HATMA1 | IAUCN04S7L005ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS™ 7 | — |
| Configuration | Dual N-Channel (Dual Drain, Half-Bridge) | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID), Tc=25°C | 65 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max @ VGS=10V | 5.04 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation (PD) @ Tc=25°C | 40 W | — |
| Suhu Hubung Kerja | -55 °C to +175 °C | — |
| Paket | PG-TDSON-8-57 (SuperSO8 half-bridge) | PG-TDSON-8-43 (TDSON-8) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Level MSL | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Status RoHS | Compliant | Compliant |
| Automotive Qualification | AEC-Q101 (family-level, automotive grade) | AEC-Q101 qualified |
| Technology | Trench MOSFET, OptiMOS™ 7 40V | OptiMOS 7 (trench N-channel MOSFET) |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D, T_C=25°C) | — | 430 A (Tj) |
| Continuous Drain Current (I_D, T_C=100°C) | — | [DATA_NEEDED: I_D at T_C=100°C] |
| On-Resistance R_DS(on) max | — | 0.52 mΩ |
| Power Dissipation (P_D) | — | 179 W (T_C) |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical and min/max] |
| Total Gate Charge (Q_g) | — | [DATA_NEEDED: total Q_g in nC] |
| Rentang Suhu Kerja | — | -55°C to +175°C (Tj) |
| Jumlah Pin | — | 8 |
| Lead-Free | — | Yes |