IAUCN04S7N012ATMA1 vs IAUC60N04S6N031HATMA1 Perbandingan
Perbandingan bersamaan detil IAUCN04S7N012ATMA1 dari Infineon dan IAUC60N04S6N031HATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IAUC60N04S6N031HATMA1 - 40V 60A Half-Bridge MOSFET | Infineon
IAUC60N04S6N031HATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IAUCN04S7N012ATMA1 | IAUC60N04S6N031HATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Transistor | N-Channel MOSFET | — |
| Technology | OptiMOS-7 (trench) | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at TC=25°C | 120 A | — |
| On-State Resistance RDS(on) max at VGS=10V | 1.2 mΩ | — |
| On-State Resistance RDS(on) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS absolute max] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| Rentang Suhu Kerja | -55 °C to +175 °C [DATA_NEEDED: junction temperature max from datasheet] | -55 °C to +175 °C (Tj) |
| Paket | PG-TDSON-8-34 (8-PowerTDFN) | PG-TDSON-8-56 (5 mm x 6 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Transistor Grade | Automotive (AEC-Q101) | — |
| Dissipasi Listrik (Ptot) | [DATA_NEEDED: Ptot at TC=25°C] | — |
| Thermal Resistance RθJA | [DATA_NEEDED: RθJA on JEDEC PCB] | — |
| Status RoHS | Compliant | Compliant |
| Bebas Halogen | Yes | — |
| Level MSL | 1 | [DATA_NEEDED: MSL rating] |
| Polarity | N-Channel | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | IAUC (Integrated Automotive Half-Bridge) |
| Process Technology | — | OptiMOS 6 40V |
| Configuration | — | Half-Bridge (2 N-Channel MOSFETs) |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D, Tj) | — | 60 A |
| Power Dissipation (P_D, Tc=25C) | — | 75 W |
| R_DS(on) at VGS=10V | — | 3.1 mΩ |
| Gate-Source Voltage (V_GS) max | — | [DATA_NEEDED: V_GS max rating] |
| Jumlah Pin | — | 8 |
| Automotive Qualification | — | AEC-Q101 |