IAUCN04S7N015GATMA1 vs IAUCN04S6N013TATMA1 Perbandingan

Perbandingan bersamaan detil IAUCN04S7N015GATMA1 dari Infineon dan IAUCN04S6N013TATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IAUCN04S7N015GATMA1 IAUCN04S7N015GATMA1 - 40V 165A OptiMOS 7 N-FET | Infineon

IAUCN04S7N015GATMA1 - 40V 165A OptiMOS 7 N-FET | Infineon

IAUCN04S7N015GATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IAUCN04S7N015GATMA1 IAUCN04S6N013TATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS 7 —
Channel Type N-Channel —
Drain-Source Voltage (V_DS) 40 V —
Continuous Drain Current (I_D) 165 A (Tc) —
Power Dissipation (P_D) 96 W (Tc) —
R_DS(on) max 1.53 mΩ at V_GS=10 V —
Gate-Source Voltage (V_GS) max [DATA_NEEDED: V_GS max] —
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: V_GS(th) typical] —
Paket PG-THSOG-4-1 (SSO4G 5x6) surface mount PG-LHDSO-10-1 (SSO10T)
Suhu Hubung Kerja -55C to +175C -55 °C to +175 °C
Automotive Qualification AEC-Q101 qualified AEC-Q101
Total Gate Charge (Q_G) [DATA_NEEDED: total gate charge] —
Status RoHS Compliant Compliant
Tipe Mounting Surface Mount (IMS-compatible source-down) Surface Mount
Level MSL 1 (per JEDEC J-STD-020) —
FET Type — N-Channel
Drain-Source Voltage (V<sub>DS</sub>) — 40 V
Continuous Drain Current (I<sub>D</sub>) — 230 A at T<sub>C</sub>
R<sub>DS(on)</sub> (max) — 1.32 mΩ at V<sub>GS</sub> = 10 V
Power Dissipation (P<sub>D</sub>) — 133 W at T<sub>C</sub>
Gate Threshold Voltage (V<sub>GS(th)</sub>) — 2.6 V (typ)
Total Gate Charge (Q<sub>g</sub>) — 52 nC at V<sub>GS</sub> = 10 V
Input Capacitance (C<sub>iss</sub>) — 1.08 nF
Output Capacitance (C<sub>oss</sub>) — 3.7 nF
Reverse Transfer Capacitance (C<sub>rss</sub>) — 51 pF

Spek dan Sumber

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