IAUCN04S7N015GATMA1 vs IAUCN04S7N006TATMA1 Perbandingan
Perbandingan bersamaan detil IAUCN04S7N015GATMA1 dari Infineon dan IAUCN04S7N006TATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IAUCN04S7N015GATMA1 | IAUCN04S7N006TATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 7 | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (V_DS) | 40 V | 40 V |
| Continuous Drain Current (I_D) | 165 A (Tc) | — |
| Power Dissipation (P_D) | 96 W (Tc) | — |
| R_DS(on) max | 1.53 mΩ at V_GS=10 V | — |
| Gate-Source Voltage (V_GS) max | [DATA_NEEDED: V_GS max] | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical] | [DATA_NEEDED: V_GS(th) typical/min/max] |
| Paket | PG-THSOG-4-1 (SSO4G 5x6) surface mount | PG-LHDSO-10-3 (10-LSOP, 5.30 mm width, exposed pad) |
| Suhu Hubung Kerja | -55C to +175C | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| Total Gate Charge (Q_G) | [DATA_NEEDED: total gate charge] | [DATA_NEEDED: Q_G at V_GS=10V] |
| Status RoHS | Compliant | Compliant |
| Tipe Mounting | Surface Mount (IMS-compatible source-down) | Surface Mount |
| Level MSL | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Polarity | — | N-Channel |
| Continuous Drain Current (I_D, T_j) | — | 425 A |
| Power Dissipation (P_D, T_C) | — | 205 W |
| R_DS(on) (typ, V_GS=10V) | — | 0.63 mΩ |
| Technology | — | OptiMOS 7 (shielded-gate trench) |
| Rentang Suhu Kerja | — | [DATA_NEEDED: Tj min/max] |
| Automotive Grade | — | Yes (Infineon automotive MOSFET line) |
| Lead-Free | — | Yes |