IAUCN04S7N019GATMA1 vs IAUC120N04S6N010ATMA1 Perbandingan

Perbandingan bersamaan detil IAUCN04S7N019GATMA1 dari Infineon dan IAUC120N04S6N010ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IAUC120N04S6N010ATMA1 IAUC120N04S6N010ATMA1 - 40V 1mΩ 150A N-Ch OptiMOS 6 | Infineon

IAUC120N04S6N010ATMA1 - 40V 1mΩ 150A N-Ch OptiMOS 6 | Infineon

IAUC120N04S6N010ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IAUCN04S7N019GATMA1 IAUC120N04S6N010ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS 7 —
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID, Tj) 147 A —
On-Resistance RDS(on) typical 1.95 mOhm —
Maximum Power Dissipation (Tc) 81 W —
Paket PG-THSOG-4-1 (SSO4G 5x6 mm) PG-TDSON-8-34 (5x6 mm leadless)
Tipe Mounting Surface Mount Surface Mount
Substrate Compatibility IMS substrates and legacy PCB —
Automotive Qualification AEC-Q101 (per family datasheet) AEC-Q101
Status RoHS Compliant Compliant
Lead-Free Yes —
Tape and Reel Packaging Yes (per ATMA1 suffix) —
Rentang Suhu Kerja [DATA_NEEDED: junction temperature range from datasheet] -55 °C to +175 °C (TJ, per Infineon OptiMOS 6 family)
FET Type — N-Channel
Drain-Source Voltage (V(BR)DSS) — 40 V
Continuous Drain Current (Id, Tc) — 150 A
Power Dissipation (Pd, Tc) — 150 W
RDS(on) at VGS=10V (typ) — 1.0 mΩ
RDS(on) at VGS=10V (max per LCSC excerpt) — 1.03 mΩ
Gate-Source Threshold (VGS(th), typ) — 3 V (at 90 µA)
Technology — OptiMOS 6
Level MSL — 1 (per JEDEC J-STD-020, per Infineon TDSON family)
Gate Drive Recommendation — 10 V VGS for full RDS(on) spec
Polarity — Single N-channel

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