IAUCN04S7N027GATMA1 vs IAUA180N04S5N012AUMA1 Perbandingan
Perbandingan bersamaan detil IAUCN04S7N027GATMA1 dari Infineon dan IAUA180N04S5N012AUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IAUA180N04S5N012AUMA1 - 40V 180A OptiMOS-5 N-MOSFET | Infineon
IAUA180N04S5N012AUMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IAUCN04S7N027GATMA1 | IAUA180N04S5N012AUMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (Vds max) | 40 V | — |
| Continuous Drain Current (Id) | 117 A | — |
| On-Resistance (Rds(on) max) | 2.67 mOhm | — |
| Power Dissipation (Pd) | 70 W (Tc) | — |
| Paket / Case | PG-THSOG-4-1 (SSO4G 5x6) | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Qualification | Automotive | — |
| Rentang Suhu Kerja | [DATA_NEEDED: operating temperature range] | -55 °C to +175 °C (Tj) |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th)] | — |
| Gate-Source Voltage Max (Vgs) | [DATA_NEEDED: Vgs max] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | — |
| Status RoHS | Compliant | Compliant |
| Level MSL | [DATA_NEEDED: MSL] | — |
| Substrate Compatibility | IMS substrates and legacy FR-4 | — |
| Part Number | — | IAUA180N04S5N012AUMA1 |
| Series | — | OptiMOS-5 40 V |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) | — | 180 A (Tc) |
| Maximum Power Dissipation (PD) | — | 125 W (Tc) |
| R_DS(on) (max) | — | 1.2 mΩ at 10 V VGS |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Paket | — | PG-HSOF-5-2 (sTOLL, MO-319A / HSOF-5), 7x8 mm² |
| Technology | — | OptiMOS-5 Trench |
| Automotive Qualification | — | AEC-Q101 |