IAUCN04S7N037GATMA1 vs IAUCN04S7N015GATMA1 Perbandingan

Perbandingan bersamaan detil IAUCN04S7N037GATMA1 dari Infineon dan IAUCN04S7N015GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IAUCN04S7N015GATMA1 IAUCN04S7N015GATMA1 - 40V 165A OptiMOS 7 N-FET | Infineon

IAUCN04S7N015GATMA1 - 40V 165A OptiMOS 7 N-FET | Infineon

IAUCN04S7N015GATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IAUCN04S7N037GATMA1 IAUCN04S7N015GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 7 —
Technology Trench MOSFET, N-Channel —
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) at Tj 91 A —
On-State Resistance RDS(on) typical 3.65 mΩ at VGS = 10 V —
Power Dissipation (PD) at Tc 57 W —
Paket SSO4G 5x6 mm² (PG-THSOG-4-1) PG-THSOG-4-1 (SSO4G 5x6) surface mount
Tipe Mounting Surface Mount (IMS substrate attach compatible) Surface Mount (IMS-compatible source-down)
Channel Type N-Channel N-Channel
Operating Mode Enhancement —
Automotive Qualification AEC-Q101 AEC-Q101 qualified
Status RoHS Compliant Compliant
Level MSL [DATA_NEEDED: MSL level] 1 (per JEDEC J-STD-020)
Rentang Suhu Kerja [DATA_NEEDED: junction/ambient temperature limits] —
Gate Charge (Qg) typical [DATA_NEEDED: total gate charge] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/range] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Product Family — OptiMOS 7
Drain-Source Voltage (V_DS) — 40 V
Continuous Drain Current (I_D) — 165 A (Tc)
Power Dissipation (P_D) — 96 W (Tc)
R_DS(on) max — 1.53 mΩ at V_GS=10 V
Gate-Source Voltage (V_GS) max — [DATA_NEEDED: V_GS max]
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: V_GS(th) typical]
Suhu Hubung Kerja — -55C to +175C
Total Gate Charge (Q_G) — [DATA_NEEDED: total gate charge]

Spek dan Sumber

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