IAUCN04S7N056DATMA1 vs IAUCN04S7N027GATMA1 Perbandingan
Perbandingan bersamaan detil IAUCN04S7N056DATMA1 dari Infineon dan IAUCN04S7N027GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IAUCN04S7N056DATMA1 | IAUCN04S7N027GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IAUCN04S7N056DATMA1 | — |
| Series | OptiMOS 5 40V | — |
| Tipe Transistor | N-Channel MOSFET | — |
| Drain-to-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) | 60 A (Tj) | — |
| RDS(on) (typ) | 5.59 mΩ | — |
| Power Dissipation (Pd) | 41 W (Tc) | 70 W (Tc) |
| Rentang Suhu Kerja | -55°C to +175°C | [DATA_NEEDED: operating temperature range] |
| Paket | PG-TDSON-8-61 (TDSON EP, 5x6 mm) | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | — |
| Technology | OptiMOS 5 trench MOSFET | — |
| Status RoHS | Compliant | Compliant |
| Packaging Type | Tape & Reel | — |
| Product Family | — | OptiMOS 7 |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (Vds max) | — | 40 V |
| Continuous Drain Current (Id) | — | 117 A |
| On-Resistance (Rds(on) max) | — | 2.67 mOhm |
| Paket / Case | — | PG-THSOG-4-1 (SSO4G 5x6) |
| Qualification | — | Automotive |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th)] |
| Gate-Source Voltage Max (Vgs) | — | [DATA_NEEDED: Vgs max] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg] |
| Level MSL | — | [DATA_NEEDED: MSL] |
| Substrate Compatibility | — | IMS substrates and legacy FR-4 |