IAUCN04S7N056DATMA1 vs IAUCN04S7N027GATMA1 Comparison

Detailed side-by-side comparison of IAUCN04S7N056DATMA1 by Infineon and IAUCN04S7N027GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUCN04S7N056DATMA1

IAUCN04S7N056DATMA1 - 40V N-Channel MOSFET 5.6mΞ© | Infineon

IAUCN04S7N056DATMA1 βœ“ Active
Infineon
IAUCN04S7N027GATMA1

IAUCN04S7N027GATMA1 - 40V 117A OptiMOS 7 N-Ch MOSFET SSO4G 5x6

IAUCN04S7N027GATMA1 βœ“ Active

Specification Comparison

Parameter IAUCN04S7N056DATMA1 IAUCN04S7N027GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.68 $0.72
Manufacturer Infineon Technologies Infineon Technologies
Part Number IAUCN04S7N056DATMA1 β€”
Series OptiMOS 5 40V β€”
Transistor Type N-Channel MOSFET β€”
Drain-to-Source Voltage (VDS) 40 V β€”
Continuous Drain Current (ID) 60 A (Tj) β€”
RDS(on) (typ) 5.59 mΞ© β€”
Power Dissipation (Pd) 41 W (Tc) 70 W (Tc)
Operating Temperature Range -55Β°C to +175Β°C [DATA_NEEDED: operating temperature range]
Package PG-TDSON-8-61 (TDSON EP, 5x6 mm) β€”
Mounting Type Surface Mount Surface Mount
Automotive Qualification AEC-Q101 β€”
Technology OptiMOS 5 trench MOSFET β€”
RoHS Status Compliant Compliant
Packaging Type Tape & Reel β€”
Product Family β€” OptiMOS 7
Channel Type β€” N-Channel
Drain-Source Voltage (Vds max) β€” 40 V
Continuous Drain Current (Id) β€” 117 A
On-Resistance (Rds(on) max) β€” 2.67 mOhm
Package / Case β€” PG-THSOG-4-1 (SSO4G 5x6)
Qualification β€” Automotive
Gate Threshold Voltage (Vgs(th)) β€” [DATA_NEEDED: Vgs(th)]
Gate-Source Voltage Max (Vgs) β€” [DATA_NEEDED: Vgs max]
Total Gate Charge (Qg) β€” [DATA_NEEDED: Qg]
MSL Level β€” [DATA_NEEDED: MSL]
Substrate Compatibility β€” IMS substrates and legacy FR-4

Datasheets & Resources

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