IAUCN08S7L024ATMA1 vs IAUC60N04S6L030HATMA1 Perbandingan
Perbandingan bersamaan detil IAUCN08S7L024ATMA1 dari Infineon dan IAUC60N04S6L030HATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon
IAUC60N04S6L030HATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IAUCN08S7L024ATMA1 | IAUC60N04S6L030HATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Technology | OptiMOS™ 7 N-channel trench MOSFET | — |
| Drain-Source Voltage (VDS) | 80 V | 40 V |
| Continuous Drain Current (ID) | 177 A (Tj) | — |
| Continuous Drain Current (Silicon-limited) | 150 A | — |
| On-Resistance RDS(on) max | 2.4 mΩ at VGS=10 V | — |
| Power Dissipation (PD) | 148 W (Tc) | — |
| Paket | PG-TDSON-8-34 (SSO8 5x6 mm²) | PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55C to +175C (Tj) | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Total Gate Charge Qg | [DATA_NEEDED: Qg typ] | — |
| Avalanche Energy Rated | Yes (single-pulse) | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 (per part number suffix) |
| Status RoHS | Compliant | Compliant |
| Level MSL | MSL1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Manufacturer | — | Infineon Technologies |
| Part Series | — | OptiMOS 6 |
| Configuration | — | Half-Bridge (2 N-Channel) |
| Continuous Drain Current (ID) at TJ | — | 60 A |
| On-Resistance R_DS(on) at VGS=10V | — | 3.0 mOhm (typical) |
| Total Gate Charge (Qg) at VGS=10V | — | 35 nC |
| Output Capacitance (Coss) | — | 2.128 nF |
| Reverse Transfer Capacitance (Crss) | — | 596 pF |
| Gate Threshold Voltage (VGS(th)) | — | 2 V |
| Maximum Power Dissipation (PD) at TC | — | 75 W |
| Suhu Hubung Kerja | — | -55 C to +175 C |