IAUCN08S7L024ATMA1 vs IAUC60N04S6L030HATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN08S7L024ATMA1 disebabkan oleh Infineon dan IAUC60N04S6L030HATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IAUC60N04S6L030HATMA1 IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon

IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon

IAUC60N04S6L030HATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IAUCN08S7L024ATMA1 IAUC60N04S6L030HATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS™ 7 N-channel trench MOSFET —
Drain-Source Voltage (VDS) 80 V 40 V
Continuous Drain Current (ID) 177 A (Tj) —
Continuous Drain Current (Silicon-limited) 150 A —
On-Resistance RDS(on) max 2.4 mΩ at VGS=10 V —
Power Dissipation (PD) 148 W (Tc) —
Kemasan PG-TDSON-8-34 (SSO8 5x6 mm²) PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55C to +175C (Tj) —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) typical/min/max] —
Total Gate Charge Qg [DATA_NEEDED: Qg typ] —
Avalanche Energy Rated Yes (single-pulse) —
Automotive Qualification AEC-Q101 qualified AEC-Q101 (per part number suffix)
Status RoHS Compliant Compliant
Aras MSL MSL1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
Manufacturer — Infineon Technologies
Part Series — OptiMOS 6
Configuration — Half-Bridge (2 N-Channel)
Continuous Drain Current (ID) at TJ — 60 A
On-Resistance R_DS(on) at VGS=10V — 3.0 mOhm (typical)
Total Gate Charge (Qg) at VGS=10V — 35 nC
Output Capacitance (Coss) — 2.128 nF
Reverse Transfer Capacitance (Crss) — 596 pF
Gate Threshold Voltage (VGS(th)) — 2 V
Maximum Power Dissipation (PD) at TC — 75 W
Suhu Hubungan Operasi — -55 C to +175 C

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