IAUCN08S7N024ATMA1 vs IAUCN08S7N034ATMA1 Perbandingan

Perbandingan bersamaan detil IAUCN08S7N024ATMA1 dari Infineon dan IAUCN08S7N034ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IAUCN08S7N024ATMA1 IAUCN08S7N034ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series Automotive OptiMOS 7 (80 V) OptiMOS™ 7
FET Type N-Channel —
Drain-Source Voltage (VDS) 80 V —
Continuous Drain Current (ID) at TC=25C 165 A —
Drain-Source On-Resistance (RDS(on)) max 2.4 mOhm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] —
Technology OptiMOS 7 trench —
Paket PG-TDSON-8-34 (8-pin, exposed pad) PG-TDSON-8-34 (TDSON EP)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55C to +175C (typical automotive) —
Dissipasi Listrik (Ptot) [DATA_NEEDED: Ptot @ TC=25C] —
Automotive Qualification AEC-Q101 AEC-Q101
RoHS Compliance Compliant —
Level MSL [DATA_NEEDED: MSL rating] MSL 1 (unlimited floor life)
Typical Application 48 V automotive DC-DC, motor drive, load switch —
Tipe Transistor — N-Channel MOSFET
Drain-Source Voltage (V<sub>DS</sub>) — 80 V
Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) — 120 A
R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V — 3.4 mΩ
Gate-Source Threshold (V<sub>GS(th)</sub>) — 3.2 V (typ)
Total Gate Charge (Q<sub>G</sub>) — 45.8 nC @ V<sub>GS</sub>=10 V
Input Capacitance (C<sub>iss</sub>) — 1.27 nF
Output Capacitance (C<sub>oss</sub>) — 3.115 nF
Reverse Transfer Capacitance (C<sub>rss</sub>) — 23 pF
Power Dissipation (P<sub>D</sub>) — 118 W
Suhu Hubung Kerja — -55°C to +175°C
Status RoHS — Compliant

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon