IAUCN08S7N024ATMA1 vs IAUCN08S7N034ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IAUCN08S7N024ATMA1 sa pamamagitan ng Infineon at IAUCN08S7N034ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IAUCN08S7N024ATMA1 - 80V 165A OptiMOS 7 N-Ch MOSFET | Infineon
IAUCN08S7N024ATMA1 ✓ NakahandaInfineon
IAUCN08S7N034ATMA1 - 80V 120A 3.4mΩ Automotive MOSFET | Infineon
IAUCN08S7N034ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IAUCN08S7N024ATMA1 | IAUCN08S7N034ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | Automotive OptiMOS 7 (80 V) | OptiMOS™ 7 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) at TC=25C | 165 A | — |
| Drain-Source On-Resistance (RDS(on)) max | 2.4 mOhm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| Technology | OptiMOS 7 trench | — |
| Packhaging | PG-TDSON-8-34 (8-pin, exposed pad) | PG-TDSON-8-34 (TDSON EP) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | -55C to +175C (typical automotive) | — |
| Pwersang Pinahihigpit (Ptot) | [DATA_NEEDED: Ptot @ TC=25C] | — |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| RoHS Compliance | Compliant | — |
| Level ng MSL | [DATA_NEEDED: MSL rating] | MSL 1 (unlimited floor life) |
| Typical Application | 48 V automotive DC-DC, motor drive, load switch | — |
| Uri ng Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 80 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | — | 120 A |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V | — | 3.4 mΩ |
| Gate-Source Threshold (V<sub>GS(th)</sub>) | — | 3.2 V (typ) |
| Total Gate Charge (Q<sub>G</sub>) | — | 45.8 nC @ V<sub>GS</sub>=10 V |
| Input Capacitance (C<sub>iss</sub>) | — | 1.27 nF |
| Output Capacitance (C<sub>oss</sub>) | — | 3.115 nF |
| Reverse Transfer Capacitance (C<sub>rss</sub>) | — | 23 pF |
| Power Dissipation (P<sub>D</sub>) | — | 118 W |
| Temperature ng Junction na Operasyon | — | -55°C to +175°C |
| Tindminan RoHS | — | Compliant |