IAUCN08S7N036TATMA1 vs IAUC120N04S6N010ATMA1 Perbandingan
Perbandingan bersamaan detil IAUCN08S7N036TATMA1 dari Infineon dan IAUC120N04S6N010ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IAUCN08S7N036TATMA1 - 80V, 3.6mΩ OptiMOS 7 Auto MOSFET | Infineon
IAUCN08S7N036TATMA1 ✓ AktifInfineon
IAUC120N04S6N010ATMA1 - 40V 1mΩ 150A N-Ch OptiMOS 6 | Infineon
IAUC120N04S6N010ATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IAUCN08S7N036TATMA1 | IAUC120N04S6N010ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 7 | — |
| Polarity | N-Channel | Single N-channel |
| Drain-Source Voltage (V_DS) | 80 V | — |
| Gate-Source Voltage (V_GS) | ±20 V | — |
| Continuous Drain Current (I_D) | 129 A | — |
| R_DS(on) max @ V_GS=10V | 3.60 mΩ | — |
| Power Dissipation (P_D) | 118 W (T_C = 25 °C) | — |
| Input Capacitance (C_iss) | 3120 pF (typ) | — |
| Output Capacitance (C_oss) | 1280 pF (typ) | — |
| Reverse Transfer Capacitance (C_rss) | 23 pF (max) | — |
| Turn-on Delay Time (t_d(on)) | 14 ns (typ) | — |
| Rise Time (t_r) | 8 ns (typ) | — |
| Turn-off Delay Time (t_d(off)) | 17 ns (typ) | — |
| Fall Time (t_f) | 8 ns (typ) | — |
| Paket | PG-LHDSO-10-1 (SSO10T, 5x7 mm) | PG-TDSON-8-34 (5x6 mm leadless) |
| Cooling | Top-side cooled | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| Status RoHS | Compliant | Compliant |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V(BR)DSS) | — | 40 V |
| Continuous Drain Current (Id, Tc) | — | 150 A |
| Power Dissipation (Pd, Tc) | — | 150 W |
| RDS(on) at VGS=10V (typ) | — | 1.0 mΩ |
| RDS(on) at VGS=10V (max per LCSC excerpt) | — | 1.03 mΩ |
| Gate-Source Threshold (VGS(th), typ) | — | 3 V (at 90 µA) |
| Technology | — | OptiMOS 6 |
| Rentang Suhu Kerja | — | -55 °C to +175 °C (TJ, per Infineon OptiMOS 6 family) |
| Level MSL | — | 1 (per JEDEC J-STD-020, per Infineon TDSON family) |
| Gate Drive Recommendation | — | 10 V VGS for full RDS(on) spec |