IAUCN10S5L110TATMA1 vs IPB024N10N5ATMA1 Perbandingan

Perbandingan bersamaan detil IAUCN10S5L110TATMA1 dari Infineon dan IPB024N10N5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IAUCN10S5L110TATMA1 IPB024N10N5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS 5 —
Technology N-Channel MOSFET, Trench, Logic Level OptiMOS 5 N-Channel MOSFET (trench, shielded gate)
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) at Tj 61 A —
On-Resistance RDS(on) max at VGS=10V 11.3 mΩ —
Gate-Source Voltage (VGS) [DATA_NEEDED: gate-source voltage rating] —
Power Dissipation (PD) at Tc 88 W —
Suhu Hubung Kerja -55 °C to +175 °C —
Storage Temperature [DATA_NEEDED: storage temperature] —
Paket PG-LHDSO-10-1 (SSO10T 5x7), Top-Side Cooled PG-TO263-7 (D2PAK-7)
Tipe Mounting Surface Mount Surface Mount
Level MSL MSL1 (260°C peak reflow) 1 (unlimited floor life at <30C/85% RH)
Avalanche Rated 100% Avalanche Tested —
Automotive Qualification AEC-Q101 Extended Qualification —
Status RoHS Compliant Compliant
Continuous Drain Current (ID, TC=25C) — 180 A
Power Dissipation (PD, TC=25C) — 250 W
On-Resistance RDS(on) max @ VGS=10V — 2.4 mΩ
Gate Threshold Voltage VGS(th) typ — [DATA_NEEDED: VGS(th) value]
Gate Charge Qg typ @ VGS=10V — [DATA_NEEDED: Qg total gate charge]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg total gate charge]
Input Capacitance Ciss — [DATA_NEEDED: Ciss value]
Output Capacitance Coss — [DATA_NEEDED: Coss value]
Reverse Recovery Charge Qrr — [DATA_NEEDED: Qrr value]
Rentang Suhu Kerja — -55C to +175C (junction)
Packaging — Tape & Reel (13-inch reel)
Bebas Halogen — Yes (per Infineon product family policy)

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