IAUCN10S5L110TATMA1 vs IPB024N10N5ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN10S5L110TATMA1 disebabkan oleh Infineon dan IPB024N10N5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IAUCN10S5L110TATMA1 IPB024N10N5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS 5 —
Technology N-Channel MOSFET, Trench, Logic Level OptiMOS 5 N-Channel MOSFET (trench, shielded gate)
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) at Tj 61 A —
On-Resistance RDS(on) max at VGS=10V 11.3 mΩ —
Gate-Source Voltage (VGS) [DATA_NEEDED: gate-source voltage rating] —
Power Dissipation (PD) at Tc 88 W —
Suhu Hubungan Operasi -55 °C to +175 °C —
Storage Temperature [DATA_NEEDED: storage temperature] —
Kemasan PG-LHDSO-10-1 (SSO10T 5x7), Top-Side Cooled PG-TO263-7 (D2PAK-7)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL MSL1 (260°C peak reflow) 1 (unlimited floor life at <30C/85% RH)
Avalanche Rated 100% Avalanche Tested —
Automotive Qualification AEC-Q101 Extended Qualification —
Status RoHS Compliant Compliant
Continuous Drain Current (ID, TC=25C) — 180 A
Power Dissipation (PD, TC=25C) — 250 W
On-Resistance RDS(on) max @ VGS=10V — 2.4 mΩ
Gate Threshold Voltage VGS(th) typ — [DATA_NEEDED: VGS(th) value]
Gate Charge Qg typ @ VGS=10V — [DATA_NEEDED: Qg total gate charge]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg total gate charge]
Input Capacitance Ciss — [DATA_NEEDED: Ciss value]
Output Capacitance Coss — [DATA_NEEDED: Coss value]
Reverse Recovery Charge Qrr — [DATA_NEEDED: Qrr value]
Gambaran Suhu Operasi — -55C to +175C (junction)
Packaging — Tape & Reel (13-inch reel)
Boson Bebas — Yes (per Infineon product family policy)

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