IAUCN10S5L280DATMA1 vs IAUC120N06S5L015ATMA1 Perbandingan

Perbandingan bersamaan detil IAUCN10S5L280DATMA1 dari Infineon dan IAUC120N06S5L015ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IAUC120N06S5L015ATMA1 IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L015ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IAUCN10S5L280DATMA1 IAUC120N06S5L015ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS 5 —
Configuration Dual N-Channel MOSFET Array —
Drain-Source Voltage (Vds) 100 V —
Continuous Drain Current (Id) at Tj 23 A —
Power Dissipation (Pd) at Tc 38 W —
Paket PG-TDSON-8-61 (SSO8) PG-TDSON-8-43 (Surface Mount)
Tipe Mounting Surface Mount Surface Mount (exposed pad)
Automotive Qualified Yes (AEC-Q101, IAU prefix) —
Technology OptiMOS 5 Trench MOSFET N-Channel MOSFET (OptiMOS 5)
Rentang Suhu Kerja -55C to +175C (junction) -55C to +175C (Tj)
Jumlah Pin 8 —
Level MSL 1 [DATA_NEEDED: MSL level]
Status RoHS Compliant Compliant
Packing Tape & Reel (T&R) —
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID, Tc=25C) — 235 A
On-Resistance RDS(on) max (VGS=10 V) — 1.5 mΩ
Gate Charge (Qg, typ) — 88 nC
Power Dissipation (PD, Tc=25C) — 167 W
Automotive Qualification — AEC-Q101 qualified
Gate-Source Voltage (VGS) max — ±20 V
Drain-Source On-State Resistance Test Conditions — VGS = 10 V, ID = 50 A
Typical Application — Automotive DC-DC, battery switches, motor drives

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