IAUCN10S7L180ATMA1 vs IAUCN08S7L033ATMA1 Perbandingan
Perbandingan bersamaan detil IAUCN10S7L180ATMA1 dari Infineon dan IAUCN08S7L033ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IAUCN10S7L180ATMA1 | IAUCN08S7L033ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS™ 7 | Automotive OptiMOS 7 |
| Tipe Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Number of Channels | 1 | — |
| Maximum Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID, Tj) | 39 A | — |
| Power Dissipation (PD, Tc=25°C) | 58 W | — |
| Drain-Source On-Resistance (RDS(on)) | 16.1 mΩ @ VGS=10 V | — |
| Typical RDS(on) | 18 mΩ | — |
| Gate-Source Threshold Voltage (VGS(th)) | 1.6 V | — |
| Maximum Gate-Source Voltage (VGS) | ±20 V (±16 V per JLCPCB listing) | — |
| Total Gate Charge (Qg) | 11 nC | — |
| Input Capacitance (Ciss) | 272 pF | — |
| Output Capacitance (Coss) | 668 pF | — |
| Reverse Transfer Capacitance (Crss) | 7 pF | — |
| Suhu Hubung Kerja | -55 °C to +175 °C | — |
| Paket | PG-TDSON-8-34 (Surface Mount) | PG-TDSON-8-34 (SSO8, 5x6 mm²) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Automotive Qualified | Yes | — |
| Status RoHS | EU RoHS Compliant with Exemption | Compliant |
| Configuration | Single Quad Drain Triple Source | — |
| Channel Mode | Enhancement | — |
| Part Status | Active | — |
| Drain-Source Voltage (VDS) | — | 80 V |
| Maximum On-Resistance (RDS(on)) at VGS=10V | — | 3.3 mΩ |
| Continuous Drain Current (ID) at Tj | — | 130 A |
| Continuous Drain Current (ID) at Tc=25°C | — | [DATA_NEEDED: ID at Tc=25C] |
| Power Dissipation (PD) at Tc=25°C | — | 118 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Gate-Source Voltage (VGS) max | — | ±20 V (typical Infineon OptiMOS 7 limit) |
| Rentang Suhu Kerja | — | -55°C to +175°C (TJ) |
| Qualification | — | Automotive Grade (per Infineon datasheet header) |
| Technology | — | OptiMOS 7 trench MOSFET |
| Level MSL | — | 1 (per JEDEC J-STD-020, typical for this package) |