IAUCN10S7L180ATMA1 vs IAUCN10S5L110TATMA1 Perbandingan

Perbandingan bersamaan detil IAUCN10S7L180ATMA1 dari Infineon dan IAUCN10S5L110TATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IAUCN10S7L180ATMA1 IAUCN10S5L110TATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS™ 7 OptiMOS 5
Tipe Transistor N-Channel MOSFET —
Number of Channels 1 —
Maximum Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID, Tj) 39 A —
Power Dissipation (PD, Tc=25°C) 58 W —
Drain-Source On-Resistance (RDS(on)) 16.1 mΩ @ VGS=10 V —
Typical RDS(on) 18 mΩ —
Gate-Source Threshold Voltage (VGS(th)) 1.6 V —
Maximum Gate-Source Voltage (VGS) ±20 V (±16 V per JLCPCB listing) —
Total Gate Charge (Qg) 11 nC —
Input Capacitance (Ciss) 272 pF —
Output Capacitance (Coss) 668 pF —
Reverse Transfer Capacitance (Crss) 7 pF —
Suhu Hubung Kerja -55 °C to +175 °C -55 °C to +175 °C
Paket PG-TDSON-8-34 (Surface Mount) PG-LHDSO-10-1 (SSO10T 5x7), Top-Side Cooled
Tipe Mounting Surface Mount Surface Mount
Automotive Qualified Yes —
Status RoHS EU RoHS Compliant with Exemption Compliant
Configuration Single Quad Drain Triple Source —
Channel Mode Enhancement —
Part Status Active —
Technology — N-Channel MOSFET, Trench, Logic Level
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at Tj — 61 A
On-Resistance RDS(on) max at VGS=10V — 11.3 mΩ
Gate-Source Voltage (VGS) — [DATA_NEEDED: gate-source voltage rating]
Power Dissipation (PD) at Tc — 88 W
Storage Temperature — [DATA_NEEDED: storage temperature]
Level MSL — MSL1 (260°C peak reflow)
Avalanche Rated — 100% Avalanche Tested
Automotive Qualification — AEC-Q101 Extended Qualification

Spek dan Sumber

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