IAUCN10S7L180ATMA1 vs IAUCN10S5L110TATMA1 Comparison
Detailed side-by-side comparison of IAUCN10S7L180ATMA1 by Infineon and IAUCN10S5L110TATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN10S7L180ATMA1
IAUCN10S7L180ATMA1 - 100V 39A 18mΞ© Automotive MOSFET | Infineon
IAUCN10S7L180ATMA1 β ActiveInfineon
IAUCN10S5L110TATMA1
IAUCN10S5L110TATMA1 - 100V 61A OptiMOS 5 N-Ch MOSFET | Infineon
IAUCN10S5L110TATMA1 β ActiveSpecification Comparison
| Parameter | IAUCN10S7L180ATMA1 | IAUCN10S5L110TATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.58 | $2.08 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOSβ’ 7 | OptiMOS 5 |
| Transistor Type | N-Channel MOSFET | β |
| Number of Channels | 1 | β |
| Maximum Drain-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID, Tj) | 39 A | β |
| Power Dissipation (PD, Tc=25Β°C) | 58 W | β |
| Drain-Source On-Resistance (RDS(on)) | 16.1 mΞ© @ VGS=10 V | β |
| Typical RDS(on) | 18 mΞ© | β |
| Gate-Source Threshold Voltage (VGS(th)) | 1.6 V | β |
| Maximum Gate-Source Voltage (VGS) | Β±20 V (Β±16 V per JLCPCB listing) | β |
| Total Gate Charge (Qg) | 11 nC | β |
| Input Capacitance (Ciss) | 272 pF | β |
| Output Capacitance (Coss) | 668 pF | β |
| Reverse Transfer Capacitance (Crss) | 7 pF | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | -55 Β°C to +175 Β°C |
| Package | PG-TDSON-8-34 (Surface Mount) | PG-LHDSO-10-1 (SSO10T 5x7), Top-Side Cooled |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualified | Yes | β |
| RoHS Status | EU RoHS Compliant with Exemption | Compliant |
| Configuration | Single Quad Drain Triple Source | β |
| Channel Mode | Enhancement | β |
| Part Status | Active | β |
| Technology | β | N-Channel MOSFET, Trench, Logic Level |
| Drain-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID) at Tj | β | 61 A |
| On-Resistance RDS(on) max at VGS=10V | β | 11.3 mΞ© |
| Gate-Source Voltage (VGS) | β | [DATA_NEEDED: gate-source voltage rating] |
| Power Dissipation (PD) at Tc | β | 88 W |
| Storage Temperature | β | [DATA_NEEDED: storage temperature] |
| MSL Level | β | MSL1 (260Β°C peak reflow) |
| Avalanche Rated | β | 100% Avalanche Tested |
| Automotive Qualification | β | AEC-Q101 Extended Qualification |