IAUCN10S7L180ATMA1 vs IAUCN10S5L110TATMA1 比較
詳細並排比較 IAUCN10S7L180ATMA1 由 Infineon 與 IAUCN10S5L110TATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IAUCN10S7L180ATMA1 | IAUCN10S5L110TATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS™ 7 | OptiMOS 5 |
| 電晶體類型 | N-Channel MOSFET | — |
| Number of Channels | 1 | — |
| Maximum Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID, Tj) | 39 A | — |
| Power Dissipation (PD, Tc=25°C) | 58 W | — |
| Drain-Source On-Resistance (RDS(on)) | 16.1 mΩ @ VGS=10 V | — |
| Typical RDS(on) | 18 mΩ | — |
| Gate-Source Threshold Voltage (VGS(th)) | 1.6 V | — |
| Maximum Gate-Source Voltage (VGS) | ±20 V (±16 V per JLCPCB listing) | — |
| Total Gate Charge (Qg) | 11 nC | — |
| Input Capacitance (Ciss) | 272 pF | — |
| Output Capacitance (Coss) | 668 pF | — |
| Reverse Transfer Capacitance (Crss) | 7 pF | — |
| 工作接面溫度 | -55 °C to +175 °C | -55 °C to +175 °C |
| 封裝 | PG-TDSON-8-34 (Surface Mount) | PG-LHDSO-10-1 (SSO10T 5x7), Top-Side Cooled |
| 安裝類型 | Surface Mount | Surface Mount |
| Automotive Qualified | Yes | — |
| RoHS 狀態 | EU RoHS Compliant with Exemption | Compliant |
| Configuration | Single Quad Drain Triple Source | — |
| Channel Mode | Enhancement | — |
| Part Status | Active | — |
| Technology | — | N-Channel MOSFET, Trench, Logic Level |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at Tj | — | 61 A |
| On-Resistance RDS(on) max at VGS=10V | — | 11.3 mΩ |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: gate-source voltage rating] |
| Power Dissipation (PD) at Tc | — | 88 W |
| Storage Temperature | — | [DATA_NEEDED: storage temperature] |
| MSL 等級 | — | MSL1 (260°C peak reflow) |
| Avalanche Rated | — | 100% Avalanche Tested |
| Automotive Qualification | — | AEC-Q101 Extended Qualification |