IAUCN10S7L290TATMA1 vs IAUCN08S7N024ATMA1 Perbandingan

Perbandingan bersamaan detil IAUCN10S7L290TATMA1 dari Infineon dan IAUCN08S7N024ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IAUCN10S7L290TATMA1 IAUCN08S7N024ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS™ 7 —
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 100 V 80 V
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Continuous Drain Current (ID) at TC=25°C 27 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM pulse rating] —
On-Resistance RDS(on) max @ VGS=10V 28.6 mΩ —
On-Resistance RDS(on) max @ VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5 V] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] —
Power Dissipation (PD) at TC=25°C 45 W —
Suhu Hubung Kerja -55 °C to +175 °C —
Paket PG-LHDSO-10-1 (SSO10T 5x7 mm) - top-side cooled PG-TDSON-8-34 (8-pin, exposed pad)
Tipe Mounting Surface Mount Surface Mount
Automotive Qualification AEC-Q100 qualified AEC-Q101
Level MSL 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
RoHS Compliance Compliant Compliant
Lead-Free Yes —
Avalanche Rated Yes —
ESD Protection HBM Class 1C (per Infineon datasheet) —
Series — Automotive OptiMOS 7 (80 V)
FET Type — N-Channel
Continuous Drain Current (ID) at TC=25C — 165 A
Drain-Source On-Resistance (RDS(on)) max — 2.4 mOhm
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ/min/max]
Technology — OptiMOS 7 trench
Rentang Suhu Kerja — -55C to +175C (typical automotive)
Dissipasi Listrik (Ptot) — [DATA_NEEDED: Ptot @ TC=25C]
Typical Application — 48 V automotive DC-DC, motor drive, load switch

Spek dan Sumber

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