IAUCN10S7L290TATMA1 vs IAUCN08S7N024ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN10S7L290TATMA1 disebabkan oleh Infineon dan IAUCN08S7N024ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IAUCN10S7L290TATMA1 IAUCN08S7N024ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS™ 7 —
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 100 V 80 V
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Continuous Drain Current (ID) at TC=25°C 27 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM pulse rating] —
On-Resistance RDS(on) max @ VGS=10V 28.6 mΩ —
On-Resistance RDS(on) max @ VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5 V] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] —
Power Dissipation (PD) at TC=25°C 45 W —
Suhu Hubungan Operasi -55 °C to +175 °C —
Kemasan PG-LHDSO-10-1 (SSO10T 5x7 mm) - top-side cooled PG-TDSON-8-34 (8-pin, exposed pad)
Jenis Pemasangan Surface Mount Surface Mount
Automotive Qualification AEC-Q100 qualified AEC-Q101
Aras MSL 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
RoHS Compliance Compliant Compliant
Lead-Free Yes —
Avalanche Rated Yes —
ESD Protection HBM Class 1C (per Infineon datasheet) —
Series — Automotive OptiMOS 7 (80 V)
FET Type — N-Channel
Continuous Drain Current (ID) at TC=25C — 165 A
Drain-Source On-Resistance (RDS(on)) max — 2.4 mOhm
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ/min/max]
Technology — OptiMOS 7 trench
Gambaran Suhu Operasi — -55C to +175C (typical automotive)
Pembuangan Kuasa (Ptot) — [DATA_NEEDED: Ptot @ TC=25C]
Typical Application — 48 V automotive DC-DC, motor drive, load switch

Laporan Datasheet & Sumber

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