IAUCN10S7L290TATMA1 vs IAUZ40N10S5N130ATMA1 Perbandingan

Perbandingan bersamaan detil IAUCN10S7L290TATMA1 dari Infineon dan IAUZ40N10S5N130ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IAUCN10S7L290TATMA1 IAUZ40N10S5N130ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS™ 7 —
Tipe Transistor N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 100 V 100 V
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Continuous Drain Current (ID) at TC=25°C 27 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM pulse rating] 160 A
On-Resistance RDS(on) max @ VGS=10V 28.6 mΩ —
On-Resistance RDS(on) max @ VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5 V] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] —
Power Dissipation (PD) at TC=25°C 45 W —
Suhu Hubung Kerja -55 °C to +175 °C —
Paket PG-LHDSO-10-1 (SSO10T 5x7 mm) - top-side cooled PG-TSDSON-8-33 (S3O8), 3.3 × 3.3 mm
Tipe Mounting Surface Mount Surface Mount
Automotive Qualification AEC-Q100 qualified AEC-Q101 qualified
Level MSL 1 (per JEDEC J-STD-020) —
RoHS Compliance Compliant —
Lead-Free Yes —
Avalanche Rated Yes —
ESD Protection HBM Class 1C (per Infineon datasheet) —
Part Number — IAUZ40N10S5N130ATMA1
Technology — OptiMOS 5 (super-junction trench)
Continuous Drain Current (ID) at Tc=25°C — 40 A
RDS(on) max at VGS=10V — 13 mΩ
RDS(on) typical — 10 mΩ
Maximum Power Dissipation (Tc) — 68 W
Rentang Suhu Kerja — -55°C to +175°C (TJ)
Lead-Free / RoHS — ROHS3 Compliant

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