IAUCN10S7N021ATMA1 vs IAUC41N06S5L100ATMA1 Perbandingan

Perbandingan bersamaan detil IAUCN10S7N021ATMA1 dari Infineon dan IAUC41N06S5L100ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IAUC41N06S5L100ATMA1 IAUC41N06S5L100ATMA1 - 60V 41A N-Ch OptiMOS 5 MOSFET | Infineon

IAUC41N06S5L100ATMA1 - 60V 41A N-Ch OptiMOS 5 MOSFET | Infineon

IAUC41N06S5L100ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IAUCN10S7N021ATMA1 IAUC41N06S5L100ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology OptiMOS™ 7 (trench MOSFET) OptiMOS 5 (Trench MOSFET)
Drain-Source Voltage (VDS) 100 V 60 V
Continuous Drain Current (ID) at Tc 175 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current IDM] —
RDS(on) max @ VGS=10 V 2.1 mΩ —
Gate-Source Threshold (VGS(th)) typ 3.2 V —
Total Gate Charge (Qg) @ VGS=10 V 105 nC —
Input Capacitance (Ciss) 2.98 nF —
Output Capacitance (Coss) 32 pF —
Reverse Transfer Capacitance (Crss) 7.153 nF —
Power Dissipation (Pd) @ Tc 217 W —
Suhu Hubung Kerja -55 °C to +175 °C —
Paket PG-TDSON-8-53 (SSO8, 5x6 mm) with exposed pad PG-TDSON-8-33 (TDSON-8, 5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Qualification AEC-Q101 (Automotive) —
Status RoHS Compliant Compliant
Continuous Drain Current (ID, Tj) — 41 A
Power Dissipation (PD, TC) — 42 W
On-State Resistance (RDS(on)) max — 10 mOhm at VGS=10 V
Gate-Source Voltage (VGS) — [DATA_NEEDED: max VGS rating]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg total]
Rentang Suhu Kerja — -55C to +175C
Channel Type — N-Channel
Level MSL — [DATA_NEEDED: MSL rating]
Automotive Qualified — Yes (AEC-Q101 automotive grade)
Interconnect — Copper clip (low-inductance)

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon