IAUCN10S7N021ATMA1 vs IAUCN04S7N009ATMA1 Perbandingan
Perbandingan bersamaan detil IAUCN10S7N021ATMA1 dari Infineon dan IAUCN04S7N009ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IAUCN10S7N021ATMA1 - 100V N-Ch 2.1mΩ OptiMOS 7 Auto MOSFET | Infineon
IAUCN10S7N021ATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IAUCN10S7N021ATMA1 | IAUCN04S7N009ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | N-Channel |
| Technology | OptiMOS™ 7 (trench MOSFET) | MOSFET (Metal Oxide) |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at Tc | 175 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current IDM] | — |
| RDS(on) max @ VGS=10 V | 2.1 mΩ | — |
| Gate-Source Threshold (VGS(th)) typ | 3.2 V | — |
| Total Gate Charge (Qg) @ VGS=10 V | 105 nC | — |
| Input Capacitance (Ciss) | 2.98 nF | — |
| Output Capacitance (Coss) | 32 pF | — |
| Reverse Transfer Capacitance (Crss) | 7.153 nF | — |
| Power Dissipation (Pd) @ Tc | 217 W | — |
| Suhu Hubung Kerja | -55 °C to +175 °C | — |
| Paket | PG-TDSON-8-53 (SSO8, 5x6 mm) with exposed pad | PG-TDSON-8-34 (Surface Mount) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Qualification | AEC-Q101 (Automotive) | AEC-Q101 (Automotive) |
| Status RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 7 |
| Drain-to-Source Voltage (V_DSS) | — | 40 V |
| Continuous Drain Current (I_D) | — | 175 A |
| R_DS(on) Max @ V_GS = 10 V | — | 0.96 mΩ |
| Gate Drive Voltage (V_GS) | — | 10 V |
| Suhu Kerja | — | -55C to +175C |
| Level MSL | — | 1 |
| Configuration | — | Single N-Channel |
| Supplier Device Package | — | PG-TDSON-8-34 |