IAUCN10S7N074ATMA1 vs IAUCN04S7N027GATMA1 Perbandingan

Perbandingan bersamaan detil IAUCN10S7N074ATMA1 dari Infineon dan IAUCN04S7N027GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IAUCN10S7N074ATMA1 IAUCN04S7N027GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology OptiMOS™ 7 (Shielded-Gate Trench) —
Drain-Source Voltage (V<sub>DS</sub>) 100 V —
Continuous Drain Current (I<sub>D</sub>) 78 A (Tj) —
Power Dissipation (P<sub>D</sub>) 96 W (Tc) —
R<sub>DS(on)</sub> (typ at V<sub>GS</sub>=10 V) 7.4 mΩ —
Gate-Source Voltage (V<sub>GS</sub>) ±20 V —
Rentang Suhu Kerja -55 °C to +175 °C [DATA_NEEDED: operating temperature range]
Paket PG-TDSON-8-34 (TDSON EP, 5x6 mm) —
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 8 (with exposed pad) —
Level MSL MSL2 (1 year) [DATA_NEEDED: MSL]
Automotive Qualification AEC-Q101 —
Status RoHS Compliant Compliant
Lead-Free Yes —
Application 48 V Automotive Systems —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 7
Channel Type — N-Channel
Drain-Source Voltage (Vds max) — 40 V
Continuous Drain Current (Id) — 117 A
On-Resistance (Rds(on) max) — 2.67 mOhm
Power Dissipation (Pd) — 70 W (Tc)
Paket / Case — PG-THSOG-4-1 (SSO4G 5x6)
Qualification — Automotive
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th)]
Gate-Source Voltage Max (Vgs) — [DATA_NEEDED: Vgs max]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg]
Substrate Compatibility — IMS substrates and legacy FR-4

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon