IAUCN10S7N074ATMA1 vs IAUCN04S7N027GATMA1 Comparison
Detailed side-by-side comparison of IAUCN10S7N074ATMA1 by Infineon and IAUCN04S7N027GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN10S7N074ATMA1
IAUCN10S7N074ATMA1 - 100V 7.4mΞ© N-Channel OptiMOS 7 MOSFET | Infineon
IAUCN10S7N074ATMA1 β ActiveInfineon
IAUCN04S7N027GATMA1
IAUCN04S7N027GATMA1 - 40V 117A OptiMOS 7 N-Ch MOSFET SSO4G 5x6
IAUCN04S7N027GATMA1 β ActiveSpecification Comparison
| Parameter | IAUCN10S7N074ATMA1 | IAUCN04S7N027GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.62 | $0.72 |
| FET Type | N-Channel | β |
| Technology | OptiMOSβ’ 7 (Shielded-Gate Trench) | β |
| Drain-Source Voltage (V<sub>DS</sub>) | 100 V | β |
| Continuous Drain Current (I<sub>D</sub>) | 78 A (Tj) | β |
| Power Dissipation (P<sub>D</sub>) | 96 W (Tc) | β |
| R<sub>DS(on)</sub> (typ at V<sub>GS</sub>=10 V) | 7.4 mΞ© | β |
| Gate-Source Voltage (V<sub>GS</sub>) | Β±20 V | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C | [DATA_NEEDED: operating temperature range] |
| Package | PG-TDSON-8-34 (TDSON EP, 5x6 mm) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 8 (with exposed pad) | β |
| MSL Level | MSL2 (1 year) | [DATA_NEEDED: MSL] |
| Automotive Qualification | AEC-Q101 | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Application | 48 V Automotive Systems | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 7 |
| Channel Type | β | N-Channel |
| Drain-Source Voltage (Vds max) | β | 40 V |
| Continuous Drain Current (Id) | β | 117 A |
| On-Resistance (Rds(on) max) | β | 2.67 mOhm |
| Power Dissipation (Pd) | β | 70 W (Tc) |
| Package / Case | β | PG-THSOG-4-1 (SSO4G 5x6) |
| Qualification | β | Automotive |
| Gate Threshold Voltage (Vgs(th)) | β | [DATA_NEEDED: Vgs(th)] |
| Gate-Source Voltage Max (Vgs) | β | [DATA_NEEDED: Vgs max] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg] |
| Substrate Compatibility | β | IMS substrates and legacy FR-4 |