IAUT300N08S5N012ATMA2 vs BSC117N08NS5ATMA1 Perbandingan
Perbandingan bersamaan detil IAUT300N08S5N012ATMA2 dari Infineon dan BSC117N08NS5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IAUT300N08S5N012ATMA2 - 80V 300A 1.2mΩ N-Ch MOSFET | Infineon
IAUT300N08S5N012ATMA2 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IAUT300N08S5N012ATMA2 | BSC117N08NS5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS™-5 80 V | — |
| Tipe Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID, Tc=25°C) | 300 A | — |
| Pulsed Drain Current (IDM) | 1200 A (per datasheet, typical) | — |
| On-Resistance RDS(on) max @ VGS=10V | 1.2 mΩ | — |
| Maximum Power Dissipation (PD, Tc) | 375 W | — |
| Gate-to-Source Voltage (VGS) | ±20 V | — |
| Rentang Suhu Kerja | -55 °C to +175 °C (TJ) | -55 C to +150 C (typical MOSFET junction) |
| Paket | PG-HSOF-8-1 (8-pin HSOF with drain tab) | PG-TDSON-8-7 (SuperSO8 5x6) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | — |
| RoHS Compliance | Compliant | — |
| Level MSL | [DATA_NEEDED: MSL level] | 1 |
| Part Number | — | BSC117N08NS5ATMA1 |
| Technology | — | OptiMOS 5 |
| Drain-Source Voltage (VDS) max | — | 80 V |
| Continuous Drain Current (ID) max | — | 49 A (Tc) |
| On-State Resistance (RDS(on)) max | — | 11.7 mOhm |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 50 W |
| Jumlah Pin | — | 8 |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) value] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |
| Status RoHS | — | Compliant |
| Lead-Free | — | Yes |