IAUT300N08S5N012ATMA2 vs ISC080N10NM6ATMA1 Perbandingan

Perbandingan bersamaan detil IAUT300N08S5N012ATMA2 dari Infineon dan ISC080N10NM6ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IAUT300N08S5N012ATMA2 IAUT300N08S5N012ATMA2 - 80V 300A 1.2mΩ N-Ch MOSFET | Infineon

IAUT300N08S5N012ATMA2 - 80V 300A 1.2mΩ N-Ch MOSFET | Infineon

IAUT300N08S5N012ATMA2 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IAUT300N08S5N012ATMA2 ISC080N10NM6ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS™-5 80 V OptiMOS™ 6 100V
Tipe Transistor N-Channel MOSFET —
Drain-to-Source Voltage (VDS) 80 V —
Continuous Drain Current (ID, Tc=25°C) 300 A —
Pulsed Drain Current (IDM) 1200 A (per datasheet, typical) [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max @ VGS=10V 1.2 mΩ —
Maximum Power Dissipation (PD, Tc) 375 W —
Gate-to-Source Voltage (VGS) ±20 V —
Rentang Suhu Kerja -55 °C to +175 °C (TJ) -55°C to +175°C (TJ max, per datasheet)
Paket PG-HSOF-8-1 (8-pin HSOF with drain tab) PG-TDSON-8 FL (TDSON EP)
Tipe Mounting Surface Mount Surface Mount
Automotive Qualification AEC-Q101 qualified —
RoHS Compliance Compliant —
Level MSL [DATA_NEEDED: MSL level] 1 (per JEDEC J-STD-020, per datasheet)
Polarity / Channel Type — N-Channel
Drain-Source Voltage (VDS) Max — 100 V
Continuous Drain Current (ID) at Ta — 13 A
Continuous Drain Current (ID) at Tc — 75 A
Power Dissipation (PD) at Ta — 3 W
Power Dissipation (PD) at Tc — 100 W
On-Resistance RDS(on) Typ @ VGS=10V, ID=20A — 8.05 mΩ
Gate Threshold Voltage (VGS(th)) — 3.3 V at 36 µA
Status RoHS — Compliant
Lead-Free — Yes
Bebas Halogen — Yes
Qualification — Industrial grade (per Infineon OptiMOS 6 100V family)

Spek dan Sumber

IAUT300N08S5N012ATMA2

📄 Lihat Spek

Lihat Selengkapnya →

Buka Semua Produk Buat BOM Ajukan Diskon