IAUT300N08S5N012ATMA2 vs ISC080N10NM6ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IAUT300N08S5N012ATMA2 sa pamamagitan ng Infineon at ISC080N10NM6ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IAUT300N08S5N012ATMA2 - 80V 300A 1.2mΩ N-Ch MOSFET | Infineon
IAUT300N08S5N012ATMA2 ✓ NakahandaInfineon
ISC080N10NM6ATMA1 - 100V OptiMOS 6 N-Channel MOSFET | Infineon
ISC080N10NM6ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IAUT300N08S5N012ATMA2 | ISC080N10NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS™-5 80 V | OptiMOS™ 6 100V |
| Uri ng Transistor | N-Channel MOSFET | — |
| Drain-to-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID, Tc=25°C) | 300 A | — |
| Pulsed Drain Current (IDM) | 1200 A (per datasheet, typical) | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | 1.2 mΩ | — |
| Maximum Power Dissipation (PD, Tc) | 375 W | — |
| Gate-to-Source Voltage (VGS) | ±20 V | — |
| Hanay ng Temperature na Operasyon | -55 °C to +175 °C (TJ) | -55°C to +175°C (TJ max, per datasheet) |
| Packhaging | PG-HSOF-8-1 (8-pin HSOF with drain tab) | PG-TDSON-8 FL (TDSON EP) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | — |
| RoHS Compliance | Compliant | — |
| Level ng MSL | [DATA_NEEDED: MSL level] | 1 (per JEDEC J-STD-020, per datasheet) |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) Max | — | 100 V |
| Continuous Drain Current (ID) at Ta | — | 13 A |
| Continuous Drain Current (ID) at Tc | — | 75 A |
| Power Dissipation (PD) at Ta | — | 3 W |
| Power Dissipation (PD) at Tc | — | 100 W |
| On-Resistance RDS(on) Typ @ VGS=10V, ID=20A | — | 8.05 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | 3.3 V at 36 µA |
| Tindminan RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Wala sa Halogen | — | Yes |
| Qualification | — | Industrial grade (per Infineon OptiMOS 6 100V family) |