IAUT300N08S5N012ATMA2 vs ISC080N10NM6ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUT300N08S5N012ATMA2 disebabkan oleh Infineon dan ISC080N10NM6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IAUT300N08S5N012ATMA2 IAUT300N08S5N012ATMA2 - 80V 300A 1.2mΩ N-Ch MOSFET | Infineon

IAUT300N08S5N012ATMA2 - 80V 300A 1.2mΩ N-Ch MOSFET | Infineon

IAUT300N08S5N012ATMA2 ✓ Aktif

Pengandingan Spesifikasi

Parametr IAUT300N08S5N012ATMA2 ISC080N10NM6ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS™-5 80 V OptiMOS™ 6 100V
Jenis Transistor N-Channel MOSFET —
Drain-to-Source Voltage (VDS) 80 V —
Continuous Drain Current (ID, Tc=25°C) 300 A —
Pulsed Drain Current (IDM) 1200 A (per datasheet, typical) [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max @ VGS=10V 1.2 mΩ —
Maximum Power Dissipation (PD, Tc) 375 W —
Gate-to-Source Voltage (VGS) ±20 V —
Gambaran Suhu Operasi -55 °C to +175 °C (TJ) -55°C to +175°C (TJ max, per datasheet)
Kemasan PG-HSOF-8-1 (8-pin HSOF with drain tab) PG-TDSON-8 FL (TDSON EP)
Jenis Pemasangan Surface Mount Surface Mount
Automotive Qualification AEC-Q101 qualified —
RoHS Compliance Compliant —
Aras MSL [DATA_NEEDED: MSL level] 1 (per JEDEC J-STD-020, per datasheet)
Polarity / Channel Type — N-Channel
Drain-Source Voltage (VDS) Max — 100 V
Continuous Drain Current (ID) at Ta — 13 A
Continuous Drain Current (ID) at Tc — 75 A
Power Dissipation (PD) at Ta — 3 W
Power Dissipation (PD) at Tc — 100 W
On-Resistance RDS(on) Typ @ VGS=10V, ID=20A — 8.05 mΩ
Gate Threshold Voltage (VGS(th)) — 3.3 V at 36 µA
Status RoHS — Compliant
Lead-Free — Yes
Boson Bebas — Yes
Qualification — Industrial grade (per Infineon OptiMOS 6 100V family)

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