IAUZ18N10S5L420ATMA1 vs BSC0901NSIATMA1 Perbandingan

Perbandingan bersamaan detil IAUZ18N10S5L420ATMA1 dari Infineon dan BSC0901NSIATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IAUZ18N10S5L420ATMA1 IAUZ18N10S5L420ATMA1 - 100V 18A 42mΩ N-Ch OptiMOS 5 | Infineon

IAUZ18N10S5L420ATMA1 - 100V 18A 42mΩ N-Ch OptiMOS 5 | Infineon

IAUZ18N10S5L420ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IAUZ18N10S5L420ATMA1 BSC0901NSIATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS 5 100V —
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 100 V 30 V
Continuous Drain Current (ID) at TC=25°C 18 A —
On-Resistance RDS(on) max at VGS=10V 42 mΩ —
Gate-Source Voltage (VGS) ±20 V —
Gate Threshold Voltage (VGS(th)) 1.7 V to 2.7 V —
Total Gate Charge (Qg) typ. 8.5 nC —
Power Dissipation (PD) at TC=25°C 30 W —
Suhu Hubung Kerja -55 °C to +175 °C —
Paket PG-TSDSON-8-32 (S3O8) 3.3x3.3 mm PG-TDSON-8-6 (5x6 mm with exposed pad)
Tipe Mounting Surface Mount Surface Mount
Automotive Qualification AEC-Q101 qualified —
Technology OptiMOS 5 trench OptiMOS 25V N-Channel Power MOSFET
Configuration Single with built-in diode —
Status RoHS Compliant Compliant
Level MSL 1 1
Continuous Drain Current (ID) at Ta=25C — 28 A
Continuous Drain Current (ID) at Tc — 100 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-State Resistance (RDS(on)) at VGS=10V — 2.0 mOhm typical
On-State Resistance (RDS(on)) at VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Gate-Source Threshold Voltage (VGS(th)) — 2.2 V max
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge nC]
Power Dissipation (PD) at Ta=25C — 2.5 W
Power Dissipation (PD) at Tc — 69 W
Rentang Suhu Kerja — -55 C to +150 C
Jumlah Pin — 8
Bebas Halogen — Yes

Spek dan Sumber

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