IAUZ18N10S5L420ATMA1 vs BSC0901NSIATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IAUZ18N10S5L420ATMA1 sa pamamagitan ng Infineon at BSC0901NSIATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IAUZ18N10S5L420ATMA1 - 100V 18A 42mΩ N-Ch OptiMOS 5 | Infineon
IAUZ18N10S5L420ATMA1 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | IAUZ18N10S5L420ATMA1 | BSC0901NSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 5 100V | — |
| Uri ng Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 100 V | 30 V |
| Continuous Drain Current (ID) at TC=25°C | 18 A | — |
| On-Resistance RDS(on) max at VGS=10V | 42 mΩ | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | 1.7 V to 2.7 V | — |
| Total Gate Charge (Qg) typ. | 8.5 nC | — |
| Power Dissipation (PD) at TC=25°C | 30 W | — |
| Temperature ng Junction na Operasyon | -55 °C to +175 °C | — |
| Packhaging | PG-TSDSON-8-32 (S3O8) 3.3x3.3 mm | PG-TDSON-8-6 (5x6 mm with exposed pad) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | — |
| Technology | OptiMOS 5 trench | OptiMOS 25V N-Channel Power MOSFET |
| Configuration | Single with built-in diode | — |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | 1 | 1 |
| Continuous Drain Current (ID) at Ta=25C | — | 28 A |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-State Resistance (RDS(on)) at VGS=10V | — | 2.0 mOhm typical |
| On-State Resistance (RDS(on)) at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate-Source Threshold Voltage (VGS(th)) | — | 2.2 V max |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge nC] |
| Power Dissipation (PD) at Ta=25C | — | 2.5 W |
| Power Dissipation (PD) at Tc | — | 69 W |
| Hanay ng Temperature na Operasyon | — | -55 C to +150 C |
| Bilang ng Pin | — | 8 |
| Wala sa Halogen | — | Yes |