IAUZ30N06S5L140ATMA1 vs BSZ060NE2LSATMA1 Perbandingan
Perbandingan bersamaan detil IAUZ30N06S5L140ATMA1 dari Infineon dan BSZ060NE2LSATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IAUZ30N06S5L140ATMA1 | BSZ060NE2LSATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 60 V | 25 V |
| Continuous Drain Current (ID, Tc) | 30 A (Tj) | — |
| Power Dissipation (PD, Tc) | 33 W | — |
| RDS(on) Max @ VGS=10 V | 14 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 2.2 V (typ) | — |
| Total Gate Charge (Qg) | 12.2 nC @ VGS=10 V | — |
| Output Capacitance (Coss) | 888 pF @ VDS=30 V | — |
| Paket | PG-TSDSON-8-32 (S3O8, 3x3 mm) | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Hubung Kerja | -55°C to +175°C | — |
| Technology Family | OptiMOS 5 | — |
| Automotive Grade | AEC-Q101 qualified | — |
| Gate-Source Voltage Max | ±20 V | — |
| Lead-Free / RoHS | Yes (RoHS compliant) | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSZ060NE2LSATMA1 |
| Technology | — | OptiMOS™ (N-Channel Trench MOSFET) |
| Continuous Drain Current (ID) @ Ta=25C | — | 12 A |
| Continuous Drain Current (ID) @ Tc=25C | — | 44 A |
| Pulsed Drain Current (IDM) | — | 44 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 6 mOhm |
| On-Resistance RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) @ VGS=4.5V] |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) typ | — | [DATA_NEEDED: VGS(th) typical] |
| Power Dissipation (Ta) | — | 2.1 W |
| Power Dissipation (Tc) | — | 26 W |
| Rentang Suhu Kerja | — | -55C to +150C |
| Status RoHS | — | Compliant |
| Level MSL | — | 1 |
| Shipping Packaging | — | Tape & Reel |