IAUZ30N06S5L140ATMA1 vs BSZ060NE2LSATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUZ30N06S5L140ATMA1 disebabkan oleh Infineon dan BSZ060NE2LSATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IAUZ30N06S5L140ATMA1 IAUZ30N06S5L140ATMA1 - 60V 30A OptiMOS 5 N-MOSFET | Infineon

IAUZ30N06S5L140ATMA1 - 60V 30A OptiMOS 5 N-MOSFET | Infineon

IAUZ30N06S5L140ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IAUZ30N06S5L140ATMA1 BSZ060NE2LSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Drain-Source Voltage (VDS) 60 V 25 V
Continuous Drain Current (ID, Tc) 30 A (Tj) —
Power Dissipation (PD, Tc) 33 W —
RDS(on) Max @ VGS=10 V 14 mΩ —
Gate Threshold Voltage (VGS(th)) 2.2 V (typ) —
Total Gate Charge (Qg) 12.2 nC @ VGS=10 V —
Output Capacitance (Coss) 888 pF @ VDS=30 V —
Kemasan PG-TSDSON-8-32 (S3O8, 3x3 mm) PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm)
Jenis Pemasangan Surface Mount Surface Mount
Suhu Hubungan Operasi -55°C to +175°C —
Technology Family OptiMOS 5 —
Automotive Grade AEC-Q101 qualified —
Gate-Source Voltage Max ±20 V —
Lead-Free / RoHS Yes (RoHS compliant) —
Manufacturer — Infineon Technologies
Part Number — BSZ060NE2LSATMA1
Technology — OptiMOS™ (N-Channel Trench MOSFET)
Continuous Drain Current (ID) @ Ta=25C — 12 A
Continuous Drain Current (ID) @ Tc=25C — 44 A
Pulsed Drain Current (IDM) — 44 A
On-Resistance RDS(on) max @ VGS=10V — 6 mOhm
On-Resistance RDS(on) max @ VGS=4.5V — [DATA_NEEDED: RDS(on) @ VGS=4.5V]
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) typ — [DATA_NEEDED: VGS(th) typical]
Power Dissipation (Ta) — 2.1 W
Power Dissipation (Tc) — 26 W
Gambaran Suhu Operasi — -55C to +150C
Status RoHS — Compliant
Aras MSL — 1
Shipping Packaging — Tape & Reel

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