IAUZN10S7L289ATMA1 vs IAUCN10S5L110TATMA1 Perbandingan

Perbandingan bersamaan detil IAUZN10S7L289ATMA1 dari Infineon dan IAUCN10S5L110TATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IAUZN10S7L289ATMA1 IAUZN10S7L289ATMA1 - 100V 27A OptiMOS-7 N-MOSFET | Infineon

IAUZN10S7L289ATMA1 - 100V 27A OptiMOS-7 N-MOSFET | Infineon

IAUZN10S7L289ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IAUZN10S7L289ATMA1 IAUCN10S5L110TATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS-7 —
Technology Trench MOSFET (N-Channel) N-Channel MOSFET, Trench, Logic Level
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID, Tj) 27 A —
Power Dissipation (Ptot, Tc=25°C) 45 W —
On-State Resistance (RDS(on), max, VGS=10V) 28.9 mΩ —
Paket PG-TSDSON-8-44 (S3O8, 3x3 mm²) PG-LHDSO-10-1 (SSO10T 5x7), Top-Side Cooled
Tipe Mounting Surface Mount Surface Mount
Automotive Grade AEC-Q100 qualified (Automotive MOSFET) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] —
Rentang Suhu Kerja -55°C to +175°C (Tj) —
Level MSL [DATA_NEEDED: MSL rating] MSL1 (260°C peak reflow)
Status RoHS Compliant Compliant
Jumlah Pin 8 —
RoHS Compliance Yes —
Series — OptiMOS 5
Continuous Drain Current (ID) at Tj — 61 A
On-Resistance RDS(on) max at VGS=10V — 11.3 mΩ
Gate-Source Voltage (VGS) — [DATA_NEEDED: gate-source voltage rating]
Power Dissipation (PD) at Tc — 88 W
Suhu Hubung Kerja — -55 °C to +175 °C
Storage Temperature — [DATA_NEEDED: storage temperature]
Avalanche Rated — 100% Avalanche Tested
Automotive Qualification — AEC-Q101 Extended Qualification

Spek dan Sumber

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