IAUZN10S7L289ATMA1 vs IAUCN10S5L110TATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUZN10S7L289ATMA1 disebabkan oleh Infineon dan IAUCN10S5L110TATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IAUZN10S7L289ATMA1 IAUZN10S7L289ATMA1 - 100V 27A OptiMOS-7 N-MOSFET | Infineon

IAUZN10S7L289ATMA1 - 100V 27A OptiMOS-7 N-MOSFET | Infineon

IAUZN10S7L289ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IAUZN10S7L289ATMA1 IAUCN10S5L110TATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS-7 —
Technology Trench MOSFET (N-Channel) N-Channel MOSFET, Trench, Logic Level
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID, Tj) 27 A —
Power Dissipation (Ptot, Tc=25°C) 45 W —
On-State Resistance (RDS(on), max, VGS=10V) 28.9 mΩ —
Kemasan PG-TSDSON-8-44 (S3O8, 3x3 mm²) PG-LHDSO-10-1 (SSO10T 5x7), Top-Side Cooled
Jenis Pemasangan Surface Mount Surface Mount
Automotive Grade AEC-Q100 qualified (Automotive MOSFET) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] —
Gambaran Suhu Operasi -55°C to +175°C (Tj) —
Aras MSL [DATA_NEEDED: MSL rating] MSL1 (260°C peak reflow)
Status RoHS Compliant Compliant
Kiraan Pin 8 —
RoHS Compliance Yes —
Series — OptiMOS 5
Continuous Drain Current (ID) at Tj — 61 A
On-Resistance RDS(on) max at VGS=10V — 11.3 mΩ
Gate-Source Voltage (VGS) — [DATA_NEEDED: gate-source voltage rating]
Power Dissipation (PD) at Tc — 88 W
Suhu Hubungan Operasi — -55 °C to +175 °C
Storage Temperature — [DATA_NEEDED: storage temperature]
Avalanche Rated — 100% Avalanche Tested
Automotive Qualification — AEC-Q101 Extended Qualification

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