IGD06N60TATMA1 vs IGD08N120S7ATMA1 Perbandingan
Perbandingan bersamaan detil IGD06N60TATMA1 dari Infineon dan IGD08N120S7ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IGD06N60TATMA1 | IGD08N120S7ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | Transistors | IGBTs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | TRENCHSTOP IGBT3 | — |
| IGBT Type | Trench Field Stop | — |
| Collector-Emitter Voltage (VCE) | 600 V | — |
| Continuous Collector Current (IC) at TC=25°C | 12 A | — |
| Continuous Collector Current (IC) at TC=100°C | 6 A | — |
| Maximum Pulsed Collector Current (ICM) | 18 A (per datasheet) | — |
| Maximum Power Dissipation (Ptot) | 88 W | — |
| Gate-Emitter Voltage (VGE) | ±20 V | — |
| VCE(sat) at IC=6A, VGE=15V, Tj=25°C | 1.5 V (typical) | — |
| Gate Threshold Voltage (VGE(th)) | 3.0 V min / 5.0 V max (typical 4.0 V) | — |
| Turn-on Switching Energy (Eon) | [DATA_NEEDED: Eon] | — |
| Turn-off Switching Energy (Eoff) | [DATA_NEEDED: Eoff] | — |
| Integrated Diode | Yes, soft-recovery emitter-controlled diode | — |
| Suhu Hubung Kerja | -40 °C to +175 °C | -40C to +175C (industry grade) |
| Storage Temperature | -55 °C to +150 °C | — |
| Paket | PG-TO252-3-11 (DPAK / TO-252) | PG-TO252-3 (DPAK) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Product Family | — | IGBT 7 (S7) Trench Field Stop |
| Collector-Emitter Voltage (Vce max) | — | 1200 V |
| Continuous Collector Current (Ic, Tc=25C) | — | 24 A |
| Pulsed Collector Current (Icm) | — | [DATA_NEEDED: pulsed collector current] |
| Total Power Dissipation (Ptot) | — | 106 W |
| Gate-Emitter Voltage (Vge max) | — | [DATA_NEEDED: Vge max] |
| VCE(sat) at rated Ic | — | 1.65 V |
| Co-packaged Diode | — | Yes (anti-parallel emitter diode) |
| Technology | — | Trench Field Stop, 7th generation |
| Configuration | — | Single |