IGD06N60TATMA1 vs IGD08N120S7ATMA1 比較
詳細並排比較 IGD06N60TATMA1 由 Infineon 與 IGD08N120S7ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IGD06N60TATMA1 | IGD08N120S7ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | Transistors | IGBTs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | TRENCHSTOP IGBT3 | — |
| IGBT Type | Trench Field Stop | — |
| Collector-Emitter Voltage (VCE) | 600 V | — |
| Continuous Collector Current (IC) at TC=25°C | 12 A | — |
| Continuous Collector Current (IC) at TC=100°C | 6 A | — |
| Maximum Pulsed Collector Current (ICM) | 18 A (per datasheet) | — |
| Maximum Power Dissipation (Ptot) | 88 W | — |
| Gate-Emitter Voltage (VGE) | ±20 V | — |
| VCE(sat) at IC=6A, VGE=15V, Tj=25°C | 1.5 V (typical) | — |
| Gate Threshold Voltage (VGE(th)) | 3.0 V min / 5.0 V max (typical 4.0 V) | — |
| Turn-on Switching Energy (Eon) | [DATA_NEEDED: Eon] | — |
| Turn-off Switching Energy (Eoff) | [DATA_NEEDED: Eoff] | — |
| Integrated Diode | Yes, soft-recovery emitter-controlled diode | — |
| 工作接面溫度 | -40 °C to +175 °C | -40C to +175C (industry grade) |
| Storage Temperature | -55 °C to +150 °C | — |
| 封裝 | PG-TO252-3-11 (DPAK / TO-252) | PG-TO252-3 (DPAK) |
| 安裝類型 | Surface Mount | Surface Mount |
| RoHS 狀態 | Compliant | Compliant |
| Lead-Free | Yes | — |
| Product Family | — | IGBT 7 (S7) Trench Field Stop |
| Collector-Emitter Voltage (Vce max) | — | 1200 V |
| Continuous Collector Current (Ic, Tc=25C) | — | 24 A |
| Pulsed Collector Current (Icm) | — | [DATA_NEEDED: pulsed collector current] |
| Total Power Dissipation (Ptot) | — | 106 W |
| Gate-Emitter Voltage (Vge max) | — | [DATA_NEEDED: Vge max] |
| VCE(sat) at rated Ic | — | 1.65 V |
| Co-packaged Diode | — | Yes (anti-parallel emitter diode) |
| Technology | — | Trench Field Stop, 7th generation |
| Configuration | — | Single |