IHW40N120R5XKSA1 vs IGW40N120H3FKSA1 Perbandingan

Perbandingan bersamaan detil IHW40N120R5XKSA1 dari Infineon dan IGW40N120H3FKSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IHW40N120R5XKSA1 IHW40N120R5XKSA1 - 1200V 40A RC-H5 IGBT | Infineon

IHW40N120R5XKSA1 - 1200V 40A RC-H5 IGBT | Infineon

IHW40N120R5XKSA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IHW40N120R5XKSA1 IGW40N120H3FKSA1
Merek Infineon Infineon
Kategori IGBTs IGBTs
Status Lingkungan Hidup Aktif Aktif
Collector-Emitter Voltage (VCE) 1200 V —
Continuous Collector Current (IC, TC=25C) 80 A —
Pulsed Collector Current (ICM) 160 A —
Maximum Power Dissipation (Ptot) 394 W —
Gate-Emitter Voltage (VGE) +/-20 V —
VCE(sat) at IC=40A, VGE=15V, Tj=25C [DATA_NEEDED: typical VCE(sat) value] —
Integrated Anti-Parallel Diode Yes (monolithic reverse-conducting) —
Technology Trench Field Stop, Reverse-Conducting RC-H5 —
Paket TO-247-3 (PG-TO247-3) through-hole —
Tipe Mounting Through Hole Through Hole
Suhu Hubung Kerja -40C to +175C —
Storage Temperature -55C to +150C —
Soldering Temperature (max 10s) 260 C —
Switching Application Resonant / soft switching (induction cooking optimized) —
RoHS Compliance Compliant —
Bebas Halogen Yes —
Level MSL N/A (through-hole) —
Manufacturer — Infineon Technologies
Series — TRENCHSTOP™ IGBT3
IGBT Type — Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) — 1200 V
Current - Collector (Ic) Max — 80 A
Current - Collector Pulsed (Icm) — 160 A
Power - Max — 483 W
Gate Charge (Qg) — 185 nC
Input Type — Standard
Operating Temperature (TJ) — -40 °C to +175 °C
Paket / Case — PG-TO247-3-1 (TO-247-3)
Packaging — Tube
Status RoHS — [DATA_NEEDED: RoHS compliance status]
Continuous Collector Current (Ic) — 40 A (per Infineon product page)

Spek dan Sumber

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