IHW40N120R5XKSA1 vs IGW40N120H3FKSA1 比較

詳細並排比較 IHW40N120R5XKSA1 由 Infineon 與 IGW40N120H3FKSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IHW40N120R5XKSA1 IHW40N120R5XKSA1 - 1200V 40A RC-H5 IGBT | Infineon

IHW40N120R5XKSA1 - 1200V 40A RC-H5 IGBT | Infineon

IHW40N120R5XKSA1 ✓ 啟用中
Infineon
IGW40N120H3FKSA1 IGW40N120H3FKSA1 - 1200V TrenchStop IGBT3 80A TO-247 | Infineon

IGW40N120H3FKSA1 - 1200V TrenchStop IGBT3 80A TO-247 | Infineon

IGW40N120H3FKSA1 ✓ 啟用中

規格比較

參數 IHW40N120R5XKSA1 IGW40N120H3FKSA1
品牌 Infineon Infineon
類別 IGBTs IGBTs
生命週期狀態 啟用中 啟用中
Collector-Emitter Voltage (VCE) 1200 V —
Continuous Collector Current (IC, TC=25C) 80 A —
Pulsed Collector Current (ICM) 160 A —
Maximum Power Dissipation (Ptot) 394 W —
Gate-Emitter Voltage (VGE) +/-20 V —
VCE(sat) at IC=40A, VGE=15V, Tj=25C [DATA_NEEDED: typical VCE(sat) value] —
Integrated Anti-Parallel Diode Yes (monolithic reverse-conducting) —
Technology Trench Field Stop, Reverse-Conducting RC-H5 —
封裝 TO-247-3 (PG-TO247-3) through-hole —
安裝類型 Through Hole Through Hole
工作接面溫度 -40C to +175C —
Storage Temperature -55C to +150C —
Soldering Temperature (max 10s) 260 C —
Switching Application Resonant / soft switching (induction cooking optimized) —
RoHS Compliance Compliant —
無鹵素 Yes —
MSL 等級 N/A (through-hole) —
Manufacturer — Infineon Technologies
Series — TRENCHSTOP™ IGBT3
IGBT Type — Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) — 1200 V
Current - Collector (Ic) Max — 80 A
Current - Collector Pulsed (Icm) — 160 A
Power - Max — 483 W
Gate Charge (Qg) — 185 nC
Input Type — Standard
Operating Temperature (TJ) — -40 °C to +175 °C
封裝 / 外殼 — PG-TO247-3-1 (TO-247-3)
Packaging — Tube
RoHS 狀態 — [DATA_NEEDED: RoHS compliance status]
Continuous Collector Current (Ic) — 40 A (per Infineon product page)

資料表與資源

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