IHW40N120R5XKSA1 vs IGW40N120H3FKSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IHW40N120R5XKSA1 disebabkan oleh Infineon dan IGW40N120H3FKSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IHW40N120R5XKSA1 IHW40N120R5XKSA1 - 1200V 40A RC-H5 IGBT | Infineon

IHW40N120R5XKSA1 - 1200V 40A RC-H5 IGBT | Infineon

IHW40N120R5XKSA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IHW40N120R5XKSA1 IGW40N120H3FKSA1
Merek Infineon Infineon
Kategori IGBTs IGBTs
Status Lingkungan Hidup Aktif Aktif
Collector-Emitter Voltage (VCE) 1200 V —
Continuous Collector Current (IC, TC=25C) 80 A —
Pulsed Collector Current (ICM) 160 A —
Maximum Power Dissipation (Ptot) 394 W —
Gate-Emitter Voltage (VGE) +/-20 V —
VCE(sat) at IC=40A, VGE=15V, Tj=25C [DATA_NEEDED: typical VCE(sat) value] —
Integrated Anti-Parallel Diode Yes (monolithic reverse-conducting) —
Technology Trench Field Stop, Reverse-Conducting RC-H5 —
Kemasan TO-247-3 (PG-TO247-3) through-hole —
Jenis Pemasangan Through Hole Through Hole
Suhu Hubungan Operasi -40C to +175C —
Storage Temperature -55C to +150C —
Soldering Temperature (max 10s) 260 C —
Switching Application Resonant / soft switching (induction cooking optimized) —
RoHS Compliance Compliant —
Boson Bebas Yes —
Aras MSL N/A (through-hole) —
Manufacturer — Infineon Technologies
Series — TRENCHSTOP™ IGBT3
IGBT Type — Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) — 1200 V
Current - Collector (Ic) Max — 80 A
Current - Collector Pulsed (Icm) — 160 A
Power - Max — 483 W
Gate Charge (Qg) — 185 nC
Input Type — Standard
Operating Temperature (TJ) — -40 °C to +175 °C
Kemasan / Case — PG-TO247-3-1 (TO-247-3)
Packaging — Tube
Status RoHS — [DATA_NEEDED: RoHS compliance status]
Continuous Collector Current (Ic) — 40 A (per Infineon product page)

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