IPB014N06NATMA1 vs IPD65R380E6ATMA1 Perbandingan
Perbandingan bersamaan detil IPB014N06NATMA1 dari Infineon dan IPD65R380E6ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPB014N06NATMA1 | IPD65R380E6ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Transistor Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at Ta | 34 A | — |
| Continuous Drain Current (ID) at Tc | 180 A | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 214 W | — |
| On-Resistance RDS(on) max | 1.4 mΩ at VGS=10V | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Suhu Hubung Kerja | -55 °C to +175 °C | — |
| Paket | PG-TO263-7 (D2PAK-7) | PG-TO252-3 (DPAK), surface mount |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 (trench-gate) | Superjunction (CoolMOS™) |
| Avalanche Rating | 100% avalanche tested | — |
| Qualification | JEDEC qualified for target applications | — |
| Primary Application | Synchronous rectification, motor control | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | CoolMOS™ E6 |
| Tipe Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (V_DS) | — | 650 V |
| Continuous Drain Current (I_D) at T_C | — | 10.6 A |
| R_DS(on) max at V_GS=10V | — | 380 mΩ |
| R_DS(on) test conditions | — | 3.2 A, 10 V |
| Gate-Source Voltage (V_GS) max | — | ±20 V |
| Gate Threshold Voltage (V_GS(th)) | — | 3.5 V typ |
| Gate Charge (Q_G) | — | 39 nC at 10 V |
| Input Capacitance (C_iss) | — | 710 pF at 100 V |
| Power Dissipation (P_D) at T_C | — | 83 W |
| Rentang Suhu Kerja | — | -55 °C to +150 °C |
| Status RoHS | — | Compliant |
| Level MSL | — | 1 |