IPB014N06NATMA1 vs IPD65R380E6ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB014N06NATMA1 disebabkan oleh Infineon dan IPD65R380E6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPB014N06NATMA1 IPD65R380E6ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Transistor Polarity N-Channel —
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at Ta 34 A —
Continuous Drain Current (ID) at Tc 180 A —
Power Dissipation (PD) at Ta 3 W —
Power Dissipation (PD) at Tc 214 W —
On-Resistance RDS(on) max 1.4 mΩ at VGS=10V —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Suhu Hubungan Operasi -55 °C to +175 °C —
Kemasan PG-TO263-7 (D2PAK-7) PG-TO252-3 (DPAK), surface mount
Jenis Pemasangan Surface Mount Surface Mount
Technology OptiMOS 5 (trench-gate) Superjunction (CoolMOS™)
Avalanche Rating 100% avalanche tested —
Qualification JEDEC qualified for target applications —
Primary Application Synchronous rectification, motor control —
Manufacturer — Infineon Technologies
Series — CoolMOS™ E6
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (V_DS) — 650 V
Continuous Drain Current (I_D) at T_C — 10.6 A
R_DS(on) max at V_GS=10V — 380 mΩ
R_DS(on) test conditions — 3.2 A, 10 V
Gate-Source Voltage (V_GS) max — ±20 V
Gate Threshold Voltage (V_GS(th)) — 3.5 V typ
Gate Charge (Q_G) — 39 nC at 10 V
Input Capacitance (C_iss) — 710 pF at 100 V
Power Dissipation (P_D) at T_C — 83 W
Gambaran Suhu Operasi — -55 °C to +150 °C
Status RoHS — Compliant
Aras MSL — 1

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