IPB014N06NATMA1 vs IPD65R380E6ATMA1 Comparison
Detailed side-by-side comparison of IPB014N06NATMA1 by Infineon and IPD65R380E6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB014N06NATMA1 - 60V 180A OptiMOS 5 N-Channel MOSFET | Infineon
IPB014N06NATMA1 β ActiveInfineon
IPD65R380E6ATMA1 - 650V CoolMOS E6 MOSFET 380mΞ© 10.6A | Infineon
IPD65R380E6ATMA1 β ActiveSpecification Comparison
| Parameter | IPB014N06NATMA1 | IPD65R380E6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.10 | $0.65 |
| Transistor Polarity | N-Channel | β |
| Drain-Source Voltage (VDS) | 60 V | β |
| Continuous Drain Current (ID) at Ta | 34 A | β |
| Continuous Drain Current (ID) at Tc | 180 A | β |
| Power Dissipation (PD) at Ta | 3 W | β |
| Power Dissipation (PD) at Tc | 214 W | β |
| On-Resistance RDS(on) max | 1.4 mΞ© at VGS=10V | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | β |
| Package | PG-TO263-7 (D2PAK-7) | PG-TO252-3 (DPAK), surface mount |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 (trench-gate) | Superjunction (CoolMOSβ’) |
| Avalanche Rating | 100% avalanche tested | β |
| Qualification | JEDEC qualified for target applications | β |
| Primary Application | Synchronous rectification, motor control | β |
| Manufacturer | β | Infineon Technologies |
| Series | β | CoolMOSβ’ E6 |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (V_DS) | β | 650 V |
| Continuous Drain Current (I_D) at T_C | β | 10.6 A |
| R_DS(on) max at V_GS=10V | β | 380 mΞ© |
| R_DS(on) test conditions | β | 3.2 A, 10 V |
| Gate-Source Voltage (V_GS) max | β | Β±20 V |
| Gate Threshold Voltage (V_GS(th)) | β | 3.5 V typ |
| Gate Charge (Q_G) | β | 39 nC at 10 V |
| Input Capacitance (C_iss) | β | 710 pF at 100 V |
| Power Dissipation (P_D) at T_C | β | 83 W |
| Operating Temperature Range | β | -55 Β°C to +150 Β°C |
| RoHS Status | β | Compliant |
| MSL Level | β | 1 |