IPB017N10N5LFATMA1 vs IPB025N10N3GATMA1 Perbandingan
Perbandingan bersamaan detil IPB017N10N5LFATMA1 dari Infineon dan IPB025N10N3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IPB025N10N3GATMA1 - 100V 180A OptiMOS 3 N-Channel MOSFET | Infineon
IPB025N10N3GATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IPB017N10N5LFATMA1 | IPB025N10N3GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 5 Linear FET | — |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide Semiconductor) | OptiMOS 3 trench MOSFET |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) @ TC=25C | 180 A | — |
| Continuous Drain Current (ID) @ TC=100C | [DATA_NEEDED: ID at TC=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| Maximum Power Dissipation (PD) @ TC=25C | 313 W | — |
| Drain-Source On-Resistance (RDS(on)) @ VGS=10V | 1.7 mΩ (max) | — |
| Gate-Source Voltage (VGS) Max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | — |
| Rentang Suhu Kerja | -55C to +175C (junction) | -55C to +175C (junction) |
| Paket / Case | PG-TO263-7 (D2PAK-7), surface mount | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant |
| Level MSL | 1 (unlimited) | 1 (unlimited) |
| Avalanche Rated | Yes | — |
| Linear-Mode (SOA) Optimized | Yes (OptiMOS Linear FET) | — |
| Continuous Drain Current (ID) at Tc | — | 180 A |
| Power Dissipation (PD) at Tc | — | 300 W |
| RDS(on) Typical at VGS=10V, ID=100A | — | 2.5 mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | — | 3.5 V |
| Input Capacitance (Ciss) | — | 2.58 nF |
| Gate Charge (Qg) Typical | — | [DATA_NEEDED: Qg value] |
| Paket | — | PG-TO263-7 (D2PAK-7) 6+Tab |
| Bebas Halogen | — | Yes |