IPB017N10N5LFATMA1 vs IPB025N10N3GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB017N10N5LFATMA1 disebabkan oleh Infineon dan IPB025N10N3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPB017N10N5LFATMA1 IPB025N10N3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS 5 Linear FET —
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide Semiconductor) OptiMOS 3 trench MOSFET
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) @ TC=25C 180 A —
Continuous Drain Current (ID) @ TC=100C [DATA_NEEDED: ID at TC=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
Maximum Power Dissipation (PD) @ TC=25C 313 W —
Drain-Source On-Resistance (RDS(on)) @ VGS=10V 1.7 mΩ (max) —
Gate-Source Voltage (VGS) Max ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] —
Gambaran Suhu Operasi -55C to +175C (junction) -55C to +175C (junction)
Kemasan / Case PG-TO263-7 (D2PAK-7), surface mount —
Jenis Pemasangan Surface Mount Surface Mount
Status RoHS Compliant Compliant
Aras MSL 1 (unlimited) 1 (unlimited)
Avalanche Rated Yes —
Linear-Mode (SOA) Optimized Yes (OptiMOS Linear FET) —
Continuous Drain Current (ID) at Tc — 180 A
Power Dissipation (PD) at Tc — 300 W
RDS(on) Typical at VGS=10V, ID=100A — 2.5 mΩ
Gate-Source Threshold Voltage (VGS(th)) — 3.5 V
Input Capacitance (Ciss) — 2.58 nF
Gate Charge (Qg) Typical — [DATA_NEEDED: Qg value]
Kemasan — PG-TO263-7 (D2PAK-7) 6+Tab
Boson Bebas — Yes

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