IPB020N08N5ATMA1 vs IPB031N08N5ATMA1 Perbandingan

Perbandingan bersamaan detil IPB020N08N5ATMA1 dari Infineon dan IPB031N08N5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IPB020N08N5ATMA1 IPB020N08N5ATMA1 - 80V 2mOhm OptiMOS 5 N-FET | Infineon

IPB020N08N5ATMA1 - 80V 2mOhm OptiMOS 5 N-FET | Infineon

IPB020N08N5ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IPB020N08N5ATMA1 IPB031N08N5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS 5 (N-channel trench MOSFET) OptiMOS 5 (N-channel trench MOSFET)
Drain-Source Voltage (VDS) 80 V —
Continuous Drain Current (ID) at Tc=25C 120 A —
Pulsed Drain Current (IDM) 480 A —
Maximum RDS(on) at VGS=10V 2.0 mOhm —
Gate-Source Voltage (VGS) max +/- 20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) value] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] [DATA_NEEDED: Qg total]
Power Dissipation (PD) at Tc=25C 300 W —
Suhu Hubung Kerja -55C to +175C —
Thermal Resistance Junction-to-Case (RthJC) [DATA_NEEDED: RthJC value, approx 0.5 C/W] —
Paket PG-TO263-3 (D2PAK-2) PG-TO263-3 (D2PAK)
Tipe Mounting Surface Mount Surface Mount
Avalanche Energy Rated (EAS) [DATA_NEEDED: EAS value] —
Configuration Single N-channel, 3-pin (2+Tab) —
Status RoHS Compliant Compliant
Level MSL [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL rating]
Drain-Source Voltage (VDS) Max — 80 V
Continuous Drain Current (ID) — 120 A (Tc)
Power Dissipation (PD) Max — 167 W (Tc)
On-Resistance (RDS(on)) Max — 3.1 mOhm (VGS=10V)
Gate-Source Voltage (VGS) Max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) Typ — [DATA_NEEDED: VGS(th) typical]
Rentang Suhu Kerja — -55 C to +175 C
Jumlah Pin — 3 (Gate, Drain, Source + Tab)
Tab Connection — Drain (electrically connected to pin)
Automotive Qualified — Yes (per Arrow listing)

Spek dan Sumber

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