IPB020N08N5ATMA1 vs IPB031N08N5ATMA1 比較
詳細並排比較 IPB020N08N5ATMA1 由 Infineon 與 IPB031N08N5ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPB020N08N5ATMA1 | IPB031N08N5ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) at Tc=25C | 120 A | — |
| Pulsed Drain Current (IDM) | 480 A | — |
| Maximum RDS(on) at VGS=10V | 2.0 mOhm | — |
| Gate-Source Voltage (VGS) max | +/- 20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | [DATA_NEEDED: Qg total] |
| Power Dissipation (PD) at Tc=25C | 300 W | — |
| 工作接面溫度 | -55C to +175C | — |
| Thermal Resistance Junction-to-Case (RthJC) | [DATA_NEEDED: RthJC value, approx 0.5 C/W] | — |
| 封裝 | PG-TO263-3 (D2PAK-2) | PG-TO263-3 (D2PAK) |
| 安裝類型 | Surface Mount | Surface Mount |
| Avalanche Energy Rated (EAS) | [DATA_NEEDED: EAS value] | — |
| Configuration | Single N-channel, 3-pin (2+Tab) | — |
| RoHS 狀態 | Compliant | Compliant |
| MSL 等級 | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL rating] |
| Drain-Source Voltage (VDS) Max | — | 80 V |
| Continuous Drain Current (ID) | — | 120 A (Tc) |
| Power Dissipation (PD) Max | — | 167 W (Tc) |
| On-Resistance (RDS(on)) Max | — | 3.1 mOhm (VGS=10V) |
| Gate-Source Voltage (VGS) Max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) Typ | — | [DATA_NEEDED: VGS(th) typical] |
| 工作溫度範圍 | — | -55 C to +175 C |
| 腳位數 | — | 3 (Gate, Drain, Source + Tab) |
| Tab Connection | — | Drain (electrically connected to pin) |
| Automotive Qualified | — | Yes (per Arrow listing) |